Crystal Fire: The Invention of the Transistor and the Birth of the Information Age (Sloan Technology Series)
by Michael Riordan
from W. W. Norton & Company
The microchip at the heart of your computer is a complex device, but its historical origins go back to one crude-looking little gadget made up of a wedge of plastic, a strip of gold foil, a rough-hewn slab of crystallized germanium, some wires, and a bent-up paper clip. Slapped together by two Bell Labs experimenters on December 16, 1947, this invention later came to be known as the transistor, and it is the ancestor of every microchip in operation today.
Crystal Fire tells the story of the creation and development of that gadget, demonstrating that very little about the transistor's invention was as simple it seemed. The device put together on that December day was no idle experiment, but the product of decades of high-level research--and the first major practical application of the esoteric quantum mechanics that had emerged from European particle physics at the beginning of the century.
Just as fascinating as the scientific background, though, is the story of the brains and events behind the invention of the transistor. The collaboration and rivalry of the three men credited with the invention--the brilliant John Bardeen, the likable Walter Brattain, and the appallingly driven William Shockley--hold center stage. However, authors Riordan and Hoddeson make it clear that the unique organizational resources of Bell Labs, the furious course of the war effort, and the random twists and turns of historical accident played equally important roles. The saga makes for a gripping read and a crash course in the dizzying complexity of information-age invention. --Julian Dibbell
On December 16, 1947, John Bardeen and Walter Brattain, physicists at Bell Laboratories, jabbed two electrodes into a sliver of germanium. The power flowing from the germanium far exceeded what went in; in that moment the transistor was invented and the Information Age was born. No other devices have been as crucial to modern life as the transistor and the microchip it spawned. This is the story of the science and personalities that made these inventions possible. William Shockley, Bell Labs' team leader and co-recipient of the Nobel Prize with Brattain and Bardeen for the discovery, grew obsessed with the transistor and went on to become the father of Silicon Valley. The process of invention - including the competition and economic aspirations involved - all part of the greatest technological explosion in history is surveyed here.
Modular Series on Solid State Devices: Volume III: The Bipolar Junction Transistor (2nd Edition) (Modular Series on Solid State Devices, Vol 3)
by George W. Neudeck
from Prentice Hall
This book presents both a qualitative and quantitative description of the device. The second edition has been refined to improve pedagogical effectiveness.
Field Effect Devices: Volume IV (2nd Edition) (Modular Series on Solid State Devices)
by Robert F. Pierret
from Prentice Hall
The second edition examines in detail three of the most basic members of the field device family to introduce the reader to relevant terms, concepts, models, and analytical procedures.
Operation and Modeling of the MOS Transistor
by Yannis Tsividis
from Oxford University Press, USA
Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.
KEY FEATURES
Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.
Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.
New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.
Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.
Broken Genius: The Rise and Fall of William Shockley, Creator of the Electronic Age
by Joel N. Shurkin
from Macmillan
Insulated Gate Bipolar Transistor IGBT Theory and Design (Ieee Press Series on Microelectronic Systems)
by Vinod Kumar Khanna
from Wiley-IEEE Press
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
- All-in-one resource
- Explains the fundamentals of MOS and bipolar physics.
- Covers IGBT operation, device and process design, power modules, and new IGBT structures.
Bug Book: Everything You Ever Wanted to Know About Electronic Eavesdropping ... But Were Afraid to Ask
by M.L. Shannon
from Paladin Press
What would you do if you thought you were being bugged? How would you defend yourself? How would you even know about it? If you've pondered these questions, and especially if you haven't, you need to read this book. It was written to tell you, the average Joe, everything there is to know about tiny hidden transmitters that can broadcast your personal and business conversations to spies, government agents . . . even the next-door neighbors. Find out how these devices work, how effective they are, how to find them and deal with them and how to use this technology in your own self-defense if necessary. Includes scores of ideas and resources for protecting the privacy of landline, cellular and cordless telephones, as well as pagers, fax machines and computers, plus phone phreaking terms and tricks and, as one reviewer put it, true tales of the Biz that "will spook you . . . and a few that will make you laugh."
Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design
by Christian C. Enz
from Wiley
Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters.
Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine:
- the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties;
- the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices;
- the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits.
Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
MOSFET Theory and Design
by R. M. Warner
from Oxford University Press, USA
Developed for a one-semester course at the junior, senior, or graduate level, MOSFET Theory and Design presents a clear, in-depth treatment of physical analysis and design principles for the MOSFET. By focusing solely on the MOSFET, this slim volume recognizes the dominance of this device in today's microelectronics technology while also providing students with an efficient text free of extra subject matter.
Carefully building from simple examples to more complex, real-life cases, the text begins with elementary theory for the MOS capacitor, adding and explaining the complicating factors step by step. It treats the interplay of MOS capacitor and PN junction in the MOSFET both physically and analytically, using some original tools. The book goes on to cover advanced models of the MOSFET, including SPICE treatments of small-signal and large-signal problems using Level 1, 2, and 3 first-generation models, and ending with a brief discussion of second- and third-generation models.
MOSFET Theory and Design offers a "hands on" approach to learning, employing analytic, computer, and design problems. It incorporates additional pedagogical aids such as a book summary, review questions that emphasize essential points, in-text exercises with accompanying solutions, and a comprehensive bibliography.
Thin-Film Transistors
from CRC
Assesses the development, properties, processing, patterning, and device characterization of thin film transistors based on amorphous polycrystalline silicon. Tackles the challenges associated with designing high-resolution, large-area displays.
+++
